Specifications:

Thickness:1.0um +/- 10%
Orientation: 3C SiC (111)
Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
Type and dopant: N type, Undoped
Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
TTV 5-29
Bow -9 ~ 3

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SiC Film (3C) on Si Wafer