Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp
Features:
-
A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
-
Wafer size: 1" dia x 0.4 - 0.5 mm thickness
-
Orientaion: A plane <11-20> +/-0.5 Degree
-
Polished surface: Wafer surface is EPI polished via a special CMP procedure
-
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
crystal purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Please Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
 |
 |
 |
 |
 |
| Other Al2O3 | AlN template | Wafer Carriers | Plasma Cleaners | Film Coater |
 |
 |
 |
 |
 |
$40.25
Original: $115.00
-65%Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp—
$115.00
$40.25Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp
Features:
-
A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
-
Wafer size: 1" dia x 0.4 - 0.5 mm thickness
-
Orientaion: A plane <11-20> +/-0.5 Degree
-
Polished surface: Wafer surface is EPI polished via a special CMP procedure
-
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
crystal purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Please Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template | Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
-
A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
-
Wafer size: 1" dia x 0.4 - 0.5 mm thickness
-
Orientaion: A plane <11-20> +/-0.5 Degree
-
Polished surface: Wafer surface is EPI polished via a special CMP procedure
-
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
crystal purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Please Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template | Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
