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GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (3.8-6.4) x 10^16 /cm^3
- Mobility: (3450-4150) cm^2/V.S
- Resistivity: (2.74-4.24) E-2 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
$208.25
Original: $595.00
-65%GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3—
$595.00
$208.25GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (3.8-6.4) x 10^16 /cm^3
- Mobility: (3450-4150) cm^2/V.S
- Resistivity: (2.74-4.24) E-2 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
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Product Information
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Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 2" dia x 0.5mm
- Polishing: two sides polished
- Doping: Si doped
- Conductor type: S-C-N
- Carrier Concentration: (3.8-6.4) x 10^16 /cm^3
- Mobility: (3450-4150) cm^2/V.S
- Resistivity: (2.74-4.24) E-2 ohm.cm
- EPD: < 5000cm^2
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
