Quartz single crystal, Y-cut, 10x10x0.1mm, 2 sp -- SOY101001S2
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Quartz single crystal, Y-cut, 10x10x0.1mm, 2 sp -- SOY101001S2

Quartz single crystal, Y-cut, 10x10x0.1mm, 2 sp -- SOY101001S2

  • Single crystal SiO2 (quartz)
  • Size: 10 x 10 x 0.1 mm
  • Orientation: Y-cut
  • Polish: two sides polished
  • Surface roughness:  < 5 A ( by AFM)
  • Packing: in 1000 class clean room by wafer carrier

 

Typical Physical Properties

Purity   Wt %

Saw grade:  > 99.9     Optical grade: 99.99

Crystal Structure

Hex.     a= 4.914 Å   c = 5.405 Å

Growth Method

Hydrothermal

Hardness

7.0   Moh’s

Density

2.684   g/cm3

Melt Point

1610 oC          ( phase transition point: 573.1oC)

Specific Heat

0.18  cal/gm

Thermoelectric Constant

1200 mV/oC @ 300 oC

Thermal Conductivity

0.0033  cal/cm/ oC

Thermal Expansion (x10-6/ oC)

a11: 13.71      a33:  7.48

Index of Refraction

1.544

Q Value

Acoustic Velocity, SAW

Frequency Constant, BAW

Piezoelectric Coupling 

1.8 x 106 min.

3160  ( m/sec  )

1661  ( kHz/mm )

K2 (%)   BAW:  0.65       SAW: 0.14       

Inclusion

IEC Grade II



choose other  quartz substrate

Choose substrate from A -Z

Wafer Carrier Box

Film Coating




 
$33.25

Original: $95.00

-65%
Quartz single crystal, Y-cut, 10x10x0.1mm, 2 sp -- SOY101001S2

$95.00

$33.25

Quartz single crystal, Y-cut, 10x10x0.1mm, 2 sp -- SOY101001S2

  • Single crystal SiO2 (quartz)
  • Size: 10 x 10 x 0.1 mm
  • Orientation: Y-cut
  • Polish: two sides polished
  • Surface roughness:  < 5 A ( by AFM)
  • Packing: in 1000 class clean room by wafer carrier

 

Typical Physical Properties

Purity   Wt %

Saw grade:  > 99.9     Optical grade: 99.99

Crystal Structure

Hex.     a= 4.914 Å   c = 5.405 Å

Growth Method

Hydrothermal

Hardness

7.0   Moh’s

Density

2.684   g/cm3

Melt Point

1610 oC          ( phase transition point: 573.1oC)

Specific Heat

0.18  cal/gm

Thermoelectric Constant

1200 mV/oC @ 300 oC

Thermal Conductivity

0.0033  cal/cm/ oC

Thermal Expansion (x10-6/ oC)

a11: 13.71      a33:  7.48

Index of Refraction

1.544

Q Value

Acoustic Velocity, SAW

Frequency Constant, BAW

Piezoelectric Coupling 

1.8 x 106 min.

3160  ( m/sec  )

1661  ( kHz/mm )

K2 (%)   BAW:  0.65       SAW: 0.14       

Inclusion

IEC Grade II



choose other  quartz substrate

Choose substrate from A -Z

Wafer Carrier Box

Film Coating




 

Product Information

Shipping & Returns

Description

  • Single crystal SiO2 (quartz)
  • Size: 10 x 10 x 0.1 mm
  • Orientation: Y-cut
  • Polish: two sides polished
  • Surface roughness:  < 5 A ( by AFM)
  • Packing: in 1000 class clean room by wafer carrier

 

Typical Physical Properties

Purity   Wt %

Saw grade:  > 99.9     Optical grade: 99.99

Crystal Structure

Hex.     a= 4.914 Å   c = 5.405 Å

Growth Method

Hydrothermal

Hardness

7.0   Moh’s

Density

2.684   g/cm3

Melt Point

1610 oC          ( phase transition point: 573.1oC)

Specific Heat

0.18  cal/gm

Thermoelectric Constant

1200 mV/oC @ 300 oC

Thermal Conductivity

0.0033  cal/cm/ oC

Thermal Expansion (x10-6/ oC)

a11: 13.71      a33:  7.48

Index of Refraction

1.544

Q Value

Acoustic Velocity, SAW

Frequency Constant, BAW

Piezoelectric Coupling 

1.8 x 106 min.

3160  ( m/sec  )

1661  ( kHz/mm )

K2 (%)   BAW:  0.65       SAW: 0.14       

Inclusion

IEC Grade II



choose other  quartz substrate

Choose substrate from A -Z

Wafer Carrier Box

Film Coating




 

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