VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm

Ge Wafer Specification

• Growing Method:              VGF
• Orientation:                      (100) +/-0.5 Deg.
• Wafer Size:                      50(+/_0.3) mm  dia x  175(+/_15) microns  
• Surface Polishing:             One side  polished
• Surface roughness:            RMS or Ra:~ 10 A(By AFM)
• Doping:                            Ga Doped
• Conductor type:                P-type
• Resistivity:                       0.008-0.02 Ohm.cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:       N/A
• Mobility:                           N/A
• EPD:                                     <=500 /cm^2
• Ra(Average Roughness) :  < 0.4 nm
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
•  Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640