VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US
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VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

InP single crystal wafer

Orientation:                    (100)
Size:                              2" diameter x 0.35 mm
Doping:                          Un- doped
Conducting type:             S-C
Polish:                            Two sides polished
Resistivity:                      (2.48-3.34)10^-1 ohm.cm
Mobility:                         4250-4340cm^2/V.S
EPD:                              <5000 /cm^2
Carrier Concerntration:    (4.34-5.91) ^15 /cmE-3

EPI ready surface and packing



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$1,399.00
VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US
$1,399.00

VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US

InP single crystal wafer

Orientation:                    (100)
Size:                              2" diameter x 0.35 mm
Doping:                          Un- doped
Conducting type:             S-C
Polish:                            Two sides polished
Resistivity:                      (2.48-3.34)10^-1 ohm.cm
Mobility:                         4250-4340cm^2/V.S
EPD:                              <5000 /cm^2
Carrier Concerntration:    (4.34-5.91) ^15 /cmE-3

EPI ready surface and packing



Related Products

Other GaAs


InSb

Other InAs

 InP 


GaSb

Wafer Box

Film Coater

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Description

InP single crystal wafer

Orientation:                    (100)
Size:                              2" diameter x 0.35 mm
Doping:                          Un- doped
Conducting type:             S-C
Polish:                            Two sides polished
Resistivity:                      (2.48-3.34)10^-1 ohm.cm
Mobility:                         4250-4340cm^2/V.S
EPD:                              <5000 /cm^2
Carrier Concerntration:    (4.34-5.91) ^15 /cmE-3

EPI ready surface and packing



Related Products

Other GaAs


InSb

Other InAs

 InP 


GaSb

Wafer Box

Film Coater

RTP Furnaces